PART |
Description |
Maker |
IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8 |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM *NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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IDT
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IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119 3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM 3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
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Integrated Device Techn... Integrated Device Technology, Inc. IDT
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IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
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IDT Integrated Device Technology
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7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC |
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM 128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器,流量,通过输出 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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KM736V787 |
128Kx36 Synchronous SRAM
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Samsung Semiconductor
|
KM736V789 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
KM718FV4021 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
GS8162Z72C-150I GS8162Z18B-250I GS8162Z18B-200I GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6 ns, PBGA119 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7 ns, PBGA165 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165 18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
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GSI Technology, Inc.
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